ty p-channel mosfet RZR020P01 z structure z features 1) low on-resistance. 2) built-in g-s protection diode. 3) small and surface mount package (tsmt3). 4) low voltage drive (1.5v). z dimensions (unit : mm) each lead has same dimensions (1) gate (2) source (3) drain tsmt3 0 ~ 0.1 0.16 0.85 1.0max 0.7 0.3 ~ 0.6 ( 2 ) ( 1 ) ( 3 ) 2.9 2.8 1.9 1.6 0.950.95 0.4 abbreviated symbol : ze z applications z inner circuit switching z packaging specifications package code taping basic ordering unit (pieces) RZR020P01 tl 3000 type z absolute maximum ratings (ta=25 c) ? 1 ? 1 ? 2 parameter v v dss symbol ? 12 v v gss 10 a i d 2 a i dp 6 a i s ? 0.8 a i sp ? 6 w p d 1.0 c tch 150 c tstg ? 55 to + 150 limits unit drain-source voltage gate-source voltage drain current total power dissipation channel temperature range of storage temperature continuous pulsed continuous pulsed ? 1 pw 10 s, duty cycle 1% ? 2 when mounted on a ceramic board. source current (body diode) z thermal resistance c / w rth (ch-a) 125 parameter symbol limits unit c hannel to ambient ? when mounted on a ceramic board. ? (1) gate (2) source (3) drain ? 1 esd protection diode ? 2 body diode ? 2 ? 1 (3) (1) (2) product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
z electrical characteristics (ta=25 c) parameter symbol i gss y fs min. typ. max. unit conditions v (br) dss i dss v gs (th) r ds (on) c iss c oss c rss t d (on) t r t d (off) t f q g q gs q gd gate-source leakage drain-source breakdown voltage zero gate voltage drain current gate threshold voltage static drain-source on-state resistance forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time total gate charge gate-source charge gate-drain charge ?? 10 av gs = 10v, v ds =0v v dd ? 6v, i d = ? 2a ? 12 ?? vi d = ? 1ma, v gs =0v ??? 1 av ds = ? 12v, v gs =0v ? 0.3 ?? 1.0 v v ds = ? 6v, i d = ? 1ma ? 75 105 i d = ? 2a, v gs = ? 4.5v ? 105 145 m ? m ? m ? i d = ? 1a, v gs = ? 2.5v ? 150 225 i d = ? 1a, v gs = ? 1.8v m ? ? 200 400 i d = ? 0.4a, v gs = ? 1.5v 2 ?? sv ds = ? 6v, i d = ? 2a ? 770 ? pf v ds = ? 6v ? 75 60 ? pf v gs =0v ? 10 ? pf f=1mhz ? 17 ? ns ? 65 ? ns ? 35 ? ns ? 6.5 ? ns ? 1.3 ? nc ? 0.8 ? nc v gs = ? 4.5v ?? nc v dd ? 6 v i d = ? 1a v gs = ? 4.5v r l 6 ? r l 3 ? , r g =10 ? r g =10 ? ? pulsed ? ? ? ? ? ? ? ? ? z body diode characteristics (source-drain) (ta=25 c) v sd ??? 1.2 v forward voltage ? pulsed i s = ? 2a, v gs =0v parameter symbol min. typ. max. unit conditions ? RZR020P01 product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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